Microelectromechanical switch

摘要

A hafnium oxide hard mask layer is used to define an opening for removing sacrificial silicon oxide material surrounding the electromechanical actuator 38A. The hafnium oxide hard mask layer is compatible with the use of HF vapour for removing the sacrificial oxide and releasing the electromechanical actuating member 38A with reduced stiction. The hafnium oxide hard mask is also formed over adjacent CMOS transistor circuitry during the release etching of the MEMS or NEMS switches