发明名称 |
SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
摘要 |
A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m-plane nitride semiconductor layer and which is interposed between the n-and p-type nitride semiconductor layers; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run in a direction that defines either an angle of 5 degrees to 80 degrees or an angle of -80 degrees to -5 degrees with respect to the a-axis direction of the m-plane nitride semiconductor layer.
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申请公布号 |
EP2602836(A1) |
申请公布日期 |
2013.06.12 |
申请号 |
EP20110814318 |
申请日期 |
2011.08.05 |
申请人 |
PANASONIC CORPORATION |
发明人 |
ISOZAKI, AKIHIRO;INOUE, AKIRA;YAMADA, ATSUSHI;YOKOGAWA, TOSHIYA |
分类号 |
H01L33/22;H01L33/32;H01S5/343 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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