VARIABLE RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A variable resistance memory device and a method for fabricating the same are provided to improve storage density by using a SbmSen material layer. CONSTITUTION: A memory cell(SE) includes a first electrode(BE), a second electrode(TE), and an SbmSen material layer. The SbmSen material layer is arranged between the first electrode and the second electrode. The SbmSen material layer includes a phase separation structure. The phase separation structure has Sb atoms and Se atoms. The Sb atoms and the Se atoms are contacted with each other.