发明名称 Method of manufacturing quantum dot
摘要 A method of manufacturing a quantum dot, the method including: mixing of a Group II precursor and a Group III precursor in a solvent to prepare a first mixture; heating the first mixture at a temperature of about 200° C. to about 350° C.; adding a Group V precursor and a Group VI precursor to the first mixture while maintaining the first mixture at the temperature of about 200° C. to about 350° C. to prepare a second mixture; and maintaining the second mixture at the temperature of about 200° C. to about 350° C. to form a quantum dot.
申请公布号 US8460632(B2) 申请公布日期 2013.06.11
申请号 US20100907743 申请日期 2010.10.19
申请人 KANG JONG HYUK;SHIN JUNGHAN;PARK JAE BYUNG;LEE DONG-HOON;NAM MINKI;CHAR KOOKHEON;LEE SEONGHOON;BAE WANKI;LIM JAEHOON;JUNG JOOHYUN;SAMSUNG DISPLAY CO., LTD.;SNU R&DB FOUNDATION 发明人 KANG JONG HYUK;SHIN JUNGHAN;PARK JAE BYUNG;LEE DONG-HOON;NAM MINKI;CHAR KOOKHEON;LEE SEONGHOON;BAE WANKI;LIM JAEHOON;JUNG JOOHYUN
分类号 H01M4/58 主分类号 H01M4/58
代理机构 代理人
主权项
地址