发明名称 |
Apparatus and method for controllably implanting workpieces |
摘要 |
A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
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申请公布号 |
US8461030(B2) |
申请公布日期 |
2013.06.11 |
申请号 |
US20100947078 |
申请日期 |
2010.11.16 |
申请人 |
RENAU ANTHONY;GODET LUDOVIC;MILLER TIMOTHY J.;OLSON JOSEPH C.;SINGH VIKRAM;BUONODONO JAMES;RAMAPPA DEEPAK A.;LOW RUSSELL J.;GUPTA ATUL;DANIELS KEVIN M.;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
RENAU ANTHONY;GODET LUDOVIC;MILLER TIMOTHY J.;OLSON JOSEPH C.;SINGH VIKRAM;BUONODONO JAMES;RAMAPPA DEEPAK A.;LOW RUSSELL J.;GUPTA ATUL;DANIELS KEVIN M. |
分类号 |
H01L21/26;H01L21/42 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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