| 发明名称 |
Thermally assisted multi-bit MRAM |
| 摘要 |
Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.
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| 申请公布号 |
US8462543(B2) |
申请公布日期 |
2013.06.11 |
| 申请号 |
US201213474838 |
申请日期 |
2012.05.18 |
| 申请人 |
ZHENG YUANKAI;DIMITROV DIMITAR V.;XI HAIWEN;SEAGATE TECHNOLOGY LLC |
发明人 |
ZHENG YUANKAI;DIMITROV DIMITAR V.;XI HAIWEN |
| 分类号 |
G11C11/02 |
主分类号 |
G11C11/02 |
| 代理机构 |
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