发明名称 |
Localized implant into active region for enhanced stress |
摘要 |
Methods for enhancing strain in an integrated circuit are provided. Embodiments of the invention include using a localized implant into an active region prior to a gate etch. In another embodiment, source/drain regions adjacent to the gates are recessed to allow the strain to expand to full potential. New source/drain regions are allowed to grow back to maximize stress in the active region.
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申请公布号 |
US8461034(B2) |
申请公布日期 |
2013.06.11 |
申请号 |
US20100908306 |
申请日期 |
2010.10.20 |
申请人 |
ANDERSON BRENT A.;NOWAK EDWARD J.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;NOWAK EDWARD J. |
分类号 |
H01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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