发明名称 |
Memory erase methods and devices |
摘要 |
Memory devices and erase methods for memories are disclosed, such as those adapted to discharge an erase voltage from a memory block while protecting low voltage string select gate transistors by maintaining the string select gate transistors in a turned on state during discharge.
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申请公布号 |
US8462559(B2) |
申请公布日期 |
2013.06.11 |
申请号 |
US201113331185 |
申请日期 |
2011.12.20 |
申请人 |
YAMADA SHIGEKAZU;TANAKA TOMOHARU;MICRON TECHNOLOGY, INC. |
发明人 |
YAMADA SHIGEKAZU;TANAKA TOMOHARU |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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