发明名称 |
Locos nitride capping of deep trench polysilicon fill |
摘要 |
A polysilicon-filled isolation trench in a substrate is effective to isolate adjacent semiconductor devices from one another. A silicon nitride cap is provided to protect the polysilicon in the isolation trench from subsequent field oxidation. The cap has lateral boundaries that extend between the side boundaries of the polysilicon and the sidewalls of the trench. Subsequent field oxide regions formed adjacent to the trench establish a gap dimension from the substrate to a top surface of the field oxide regions adjacent to the polysilicon side boundaries that is no less than half of the field oxide thickness.
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申请公布号 |
US8461661(B2) |
申请公布日期 |
2013.06.11 |
申请号 |
US20090418819 |
申请日期 |
2009.04.06 |
申请人 |
HOILIEN NOEL;POLAR SEMICONDUCTOR, INC. |
发明人 |
HOILIEN NOEL |
分类号 |
H01L21/70 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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