发明名称 |
Photodetector circuit, input device, and input/output device |
摘要 |
An adverse effect of parasitic capacitance on optical data output from a photodetector circuit is suppressed. A photodetector circuit includes a photoelectric conversion element; a first field-effect transistor; a second field-effect transistor; a first conductive layer functioning as a gate of the first field-effect transistor; an insulating layer provided over the first conductive layer; a semiconductor layer overlapping with the first conductive layer with the insulating layer interposed therebetween; a second conductive layer electrically connected to the semiconductor layer; and a third conductive layer electrically connected to the semiconductor layer, whose pair of side surfaces facing each other overlaps with at least one conductive layer including the first conductive layer with the insulating layer interposed therebetween, and which functions as the other of the source and the drain of the first field-effect transistor.
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申请公布号 |
US8461590(B2) |
申请公布日期 |
2013.06.11 |
申请号 |
US201113313539 |
申请日期 |
2011.12.07 |
申请人 |
TAMURA HIKARU;KUROKAWA YOSHIYUKI;IKEDA TAKAYUKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAMURA HIKARU;KUROKAWA YOSHIYUKI;IKEDA TAKAYUKI |
分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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