发明名称 |
Method for producing nanostructures on metal oxide substrate, method for depositing thin film on same, and thin film device |
摘要 |
A method for producing nanostructures on a metal oxide substrate includes the following steps: a) forming metal aggregates on the metal oxide substrate; and b) vapor phase growing nanostructures on the metal oxide substrate covered with metal aggregates, the substrate being heated in the presence of one or more precursor gases, and the vapor phase growth of nanostructures being catalyzed by the metal aggregates. The metal aggregate formation stage a) includes an operation for reducing the surface of the metal oxide substrate by reductive plasma treatment, causing droplets of metal aggregates to form on the substrate, the metal aggregate formation stage a) and the nanostructure growth stage b) being carried out in series in a single shared plasma reactor chamber, the nanostructure growth being directly carried out on the droplets of metal aggregates.
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申请公布号 |
US8461027(B2) |
申请公布日期 |
2013.06.11 |
申请号 |
US20090933442 |
申请日期 |
2009.03.19 |
申请人 |
ALET PIERRE-JEAN;ROCA I CABAROCCAS PERE;ECOLE POLYTECHNIQUE;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;COMMISSARIAT A L'ENERGIE ATOMIQUE-CEA |
发明人 |
ALET PIERRE-JEAN;ROCA I CABAROCCAS PERE |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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