| 摘要 |
An ion-sensitive sensor with an EIS structure includes: a semiconductor substrate, on which a layer of a substrate oxide 103 is produced; an adapting or matching layer, which is prepared on the substrate oxide; a chemically stable intermediate insulator, which is deposited on the adapting or matching layer; and a sensor layer, which comprises a tantalum oxide or a tantalum oxynitride, and which is applied on the intermediate insulator; wherein the intermediate insulator comprises hafnium oxide or zirconium oxide or a mixture of zirconium oxide and hafnium oxide, and wherein the adapting or matching layer differs in its chemical composition and/or in its structure from the intermediate insulator and from the substrate oxide.
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