发明名称 |
Semiconductor devices including fin shaped semiconductor regions and stress inducing layers |
摘要 |
A semiconductor device may include a substrate, an active semiconductor region of the substrate, and a gate electrode. The active semiconductor region may include a channel region between first and second junction regions. The channel region may include a first semiconductor material, the first and second junction regions may include a second semiconductor material, and the first and second semiconductor materials may be different. The gate electrode may be on the channel region with portions of the first and second junction regions being free of the gate electrode.
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申请公布号 |
US8461653(B2) |
申请公布日期 |
2013.06.11 |
申请号 |
US201113096324 |
申请日期 |
2011.04.28 |
申请人 |
OH CHANG-WOO;PARK DONG-GUN;KIM DONG-WON;SUK SUNG-DAE;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH CHANG-WOO;PARK DONG-GUN;KIM DONG-WON;SUK SUNG-DAE |
分类号 |
H01L29/41 |
主分类号 |
H01L29/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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