发明名称 Process for preparing photo curable inkjet ink for electric-electron semi-conduct part of ultra-high density and ultra-fine integrated circuit patterning formation
摘要 The present invention relates to a method for manufacturing photosensitive inkjet ink for a semiconductor which is capable of forming a microcircuit pattern for an integrated circuit, wherein the method for manufacturing the photosensitive inkjet ink for the semiconductor is characterized by comprising the steps of: selecting a photosensitive piezoelectric conductive compound; manufacturing, using a UV ray (light)-, heat-, and radiation-curable monomer, conductive organic-inorganic hybrid semiconductor molecule particles and high/low dielectric molecule particles, optically, thermally, chemically, and electrically active light-emitting liquid crystal polymer particles, and a base prepolymer; manufacturing organic-inorganic hybrid semiconductor molecule particles and a high/low dielectric molecule particle dispersion master solution; manufacturing the master undiluted solution for the organic-inorganic hybrid semiconductor molecule particles; formulating the organic-inorganic hybrid semiconductor molecule particles; and precisely filtering the organic-inorganic hybrid semiconductor molecule particles. The present invention relates to inkjet ink for a semiconductor, and to a method for applying the ink, wherein the ink has low rates of variation of the electron mobility and band gap thereof and which has semiconducting properties, physicochemical stability, superconductivity at relatively high temperatures, piezoelectric properties, and a long operating time under low power.
申请公布号 KR101272032(B1) 申请公布日期 2013.06.11
申请号 KR20110078420 申请日期 2011.08.08
申请人 发明人
分类号 C09D11/00;C09D11/10;H05K3/10 主分类号 C09D11/00
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