| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce a difference in temperature characteristics between an enhancement MOSFET and a depression MOSFET, which compose a reference voltage generation circuit, and which can improve temperature characteristics of an output voltage of the reference voltage generation circuit; and provide a manufacturing method of the semiconductor device. <P>SOLUTION: A semiconductor device manufacturing method comprises: forming a gate insulation film 66 on a semiconductor substrate 6 so as to extend through a Ref circuit region 8 and a CMOS region 7; subsequently, selectively removing the gate insulation film 66 at a part of the CMOS region 7; subsequently, forming by thermal oxidation, a first gate insulation film 12 on the CMOS region 7 from which the gate insulation film 66 is removed; simultaneously, thickening the gate insulation film 66 left in the Ref circuit region 8 to form a second gate insulation film 13 thicker than the first gate insulation film 12. <P>COPYRIGHT: (C)2013,JPO&INPIT |
