| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage element capable of high speed operation by preventing an inversion current from increasing in a short pulse width region, thereby ensuring thermal stability. <P>SOLUTION: The storage element includes a layer structure having a storage layer the orientation of magnetization of which changes corresponding to the information, a magnetization fixed layer having magnetization perpendicular to a film surface becoming the reference of the information stored in the storage layer, and an intermediate layer of a non-magnetic material provided between the storage layer and the magnetization fixed layer. The storage layer includes a region of an oxide having a granular structure, and when current is fed in the lamination direction of the layer structure, the orientation of magnetization of the storage layer changes thus recording the information in the storage layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
