| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method which requires no post-process that requires a long time and a large amount of power and which can manufacture a light-emitting element even when a pn-junction interface of a nitride semiconductor is exposed in ambient air. <P>SOLUTION: A manufacturing method of a hetero-junction light-emitting element comprises a step of depositing an n-type zinc oxide layer by a sputtering method or a vacuum deposition method by using a composition or a compound containing zinc and oxygen as chief component elements, and at least one element selected from a group consisting of aluminum, gallium and indium as an accessory component element on a p-type nitride semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
