| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the off-current of a tunnel FET while preventing degradation of its on-current. <P>SOLUTION: A semiconductor device includes a substrate that has a groove, and a gate electrode that is formed at a location on the substrate adjacent to the groove via a gate insulating film and has a first side surface located on the opposite side of the groove and a second side surface located on the groove side. The device further includes a first side-wall insulating film formed on the first side surface of the gate electrode, and a second side-wall insulating film formed on the second side surface of the gate electrode and a side surface of the groove. The device further includes a first-conductivity-type source region formed, in the substrate, on the first side-wall insulating film side with respect to the first side surface of the gate electrode, and a second-conductivity-type drain region formed, in the substrate, on the second side-wall insulating film side with respect to the second side surface of the gate electrode and the side surface of the groove. <P>COPYRIGHT: (C)2013,JPO&INPIT |
