| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage element having excellent characteristic balance by reducing asymmetry of thermal stability about the information writing direction. <P>SOLUTION: The storage element includes a layer structure having a storage layer which has magnetization perpendicular to the film surface and the orientation of magnetization that changes corresponding to the information, a magnetization fixed layer having magnetization perpendicular to a film surface becoming a reference of the information stored in the storage layer, and an intermediate layer of a non-magnetic material provided between the storage layer and the magnetization fixed layer. When current is fed in the lamination direction of the layer structure, magnetization of the storage layer changes thus recording the information in the storage layer. The magnetization fixed layer includes a multilayer ferri-pin structure having at least two layers of a ferromagnetic layer and a non-magnetic layer, and an antiferromagnetic oxide layer is formed in contact with any ferromagnetic layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
