发明名称 METHOD FOR MANUFACTURE OF MATRIX OF MULTIPOINT AUTOEMISSIVE CATHODE BASED ON SINGLE-CRYSTAL SILICON
摘要 FIELD: electrical engineering.SUBSTANCE: multipoint autoemissive cathode matrix is manufactured on single-crystal silicon plates in microvolt gas discharge plasma by way of precipitation from vapours of carbon-containing substances such as ethanol using the phenomena of submonolayer carbon coatings self-organisation and structuring into nanoisland formations and subsequent high temperature annealing. To increase of the electric field amplification coefficient and thus to reduce operating voltages during production of increased autoemission current values one performs formation of emission centres in the shape of integral columnar nanostructures with height equal to several tens of nanometres which structures are produced by way of anisotropic etching of silicon plates using the resultant carbon nanoisland formations as mask coating.EFFECT: improving emission stability and efficiency.
申请公布号 RU2484548(C1) 申请公布日期 2013.06.10
申请号 RU20110145603 申请日期 2011.11.09
申请人 JAFAROV RAVIL' KJASHSHAFOVICH 发明人 JAFAROV RAVIL' KJASHSHAFOVICH
分类号 H01J1/30;H01J9/02 主分类号 H01J1/30
代理机构 代理人
主权项
地址