| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which field concentration just under an edge part of a LOCOS oxide film is easily alleviated, and which can achieve an excellent breakdown voltage and excellent resistance in a semiconductor layer just under the LOCOS oxide film. <P>SOLUTION: A semiconductor device (1) has a profile in which at least a part (22a, 22b) of edges (22a, 22b) of a LOCOS oxide film (22), which terminate in a lateral direction with respect to a surface of a semiconductor substrate terminates by being sandwiched by a top face and an undersurface at an angle (θ) of not less than 15 degrees and not more than 30 degrees. <P>COPYRIGHT: (C)2013,JPO&INPIT |
