| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory element and a memory device which can be operated by less current and in a high speed. <P>SOLUTION: A memory element at least includes: a memory layer 14; a magnetization fixed layer 12; an intermediate layer 13 made of nonmagnetic material which is disposed between the memory layer 14 and the magnetization fixed layer 12; and a cap layer 15. In the memory layer, a first ferromagnetic layer 14i and a second ferromagnetic layer 14p are magnetically coupled to each other via a coupling layer 14c. The first ferromagnetic layer is in contact with the intermediate layer, the second ferromagnetic layer is in contact with the cap layer, one of the first ferromagnetic layer and the second ferromagnetic layer is an in-plane magnetization layer in which in-plane magnetization is dominant, and the other one is a perpendicular magnetization layer in which perpendicular magnetization is dominant, and each magnetization direction in the first ferromagnetic layer and the second ferromagnetic layer is inclined from a direction perpendicular to a film surface. Since the magnetization direction in the memory layer is inclined, amplitude increase in precession of the magnetization in the ferromagnetic layers begins promptly when a current in a direction perpendicular to the film surface is flowed into the memory element, thereby enabling inversion operation in a short time. <P>COPYRIGHT: (C)2013,JPO&INPIT |
