| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method capable of processing a desired processed region of a substrate entirely in a short time, when performing high-temperature heat treatment of the vicinity of substrate surface uniformly only for a very short time, or when performing low-temperature plasma processing of a substrate by irradiating the substrate with plasma by reaction gas or with plasma and reaction gas simultaneously. <P>SOLUTION: In an induction coupling plasma torch unit T, a spiral coil 3 is disposed in a refrigerant flow path surrounded by a first metal plate 4, a second metal plate 5, and a refrigerant case 16, and a plasma jet mouth 8 is provided at the lowest part. In order to transmit high frequency power efficiently, a quartz window 18 is attached to the second metal plate 5. While supplying gas to a space 7 in a long chamber surrounded by the second metal plate 5 and a third metal plate 6, high frequency power is supplied to the spiral coil 3 and plasma is generated in the space 7 within the long chamber, and then a substrate 2 is irradiated with the plasma. <P>COPYRIGHT: (C)2013,JPO&INPIT |
