发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a lithography apparatus capable of correcting a position dependent error of shadowing effects caused by an exposure device employing an oblique incidence reflection optical system. <P>SOLUTION: A lithography apparatus 100 comprises a storage device 142, an acquisition section 12, a resizing section 14 and a lithography unit 150. The storage device 142 stores a correction table in which a correction value is defined for correcting a position dependent error of shadowing effects in an exposure device. The exposure device transfers to an exposed substrate a pattern formed on a mask substrate while using reflection light from the mask substrate by making illumination light obliquely incident to the mask substrate. On the mask substrate, the pattern is formed by using an oblique incidence reflection optical system. The acquisition section 12 inputs pattern data in which a position, a shape and a size are defined for each of a plurality of graphics, and acquires a corresponding correction value from the correction table for each graphic based on the position of the graphic. The resizing section 14 uses the correction value for each graphic to resize the graphic. The lithography unit 150 uses a charged particle beam to render the resized graphic on the mask substrate before pattern formation. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013115304(A) 申请公布日期 2013.06.10
申请号 JP20110261562 申请日期 2011.11.30
申请人 NUFLARE TECHNOLOGY INC 发明人 NAKAYAMADA NORIAKI;YASHIMA JUN;HARA SHIGEHIRO
分类号 H01L21/027;G03F1/76;H01J37/305 主分类号 H01L21/027
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