| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element capable of reducing a light deterioration rate. <P>SOLUTION: A photoelectric conversion element 10 includes a photoelectric conversion section 3. The photoelectric conversion section 3 has a structure in which a p-type amorphous semiconductor layer 31, a buffer layer 32, a silicon thin film 33, an i-type amorphous semiconductor layer 34, and an n-type amorphous semiconductor layer 35 are laminated. The content of a carbon atom in the buffer layer 32 is less than a reference value. The reference value is in a range of 3×10<SP POS="POST">14</SP>(piece/cm<SP POS="POST">2</SP>) to 1.2×10<SP POS="POST">16</SP>(piece/cm<SP POS="POST">2</SP>) or in a range of 3×10<SP POS="POST">14</SP>(piece/cm<SP POS="POST">2</SP>) to 1.4×10<SP POS="POST">16</SP>(piece/cm<SP POS="POST">2</SP>). The silicon thin film 33 is disposed between the buffer layer 32 and the i-type amorphous semiconductor layer 34, and has an optical band gap between an optical band gap of the buffer layer 32 and an optical band gap of the i-type amorphous semiconductor layer 34. <P>COPYRIGHT: (C)2013,JPO&INPIT |
