| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method having a process of enabling removal of only a photoresist on a rear surface side of an Si substrate after forming a protection film on a front surface side of the Si substrate and forming a groove on the rear surface side of the Si substrate by pattern etching even in the case where the protection film on the front surface side has resistance to a stripping solution for the photoresist on the rear surface side. <P>SOLUTION: A semiconductor device manufacturing method comprises: forming a semiconductor functional region 20 on a front surface side of a semiconductor substrate 1; grinding a rear surface side to reduce a thickness of the semiconductor substrate 1 to a required thickness; subsequently, coating the front surface side with a protection film 24; forming a required opening pattern on the rear surface side by using a photoresist 25; etching the semiconductor substrate 1 from the pattern opening to form a groove 16 on the rear surface; and subsequently, removing the photoresist 25 on the rear surface side by polishing to form a rear surface side semiconductor functional layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
