| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a favorable light-emitting element by a semiconductor element in which a gap is provided between an n-type semiconductor layer and a p-type semiconductor layer. <P>SOLUTION: A semiconductor device comprises: a lower electrode 2 and an n-type semiconductor layer 3 sequentially formed on a first substrate 10; a plurality of spacers 6 composed of an MgO thin film and locally formed on a surface of the n-type semiconductor layer 3; and an upper electrode (transparent electrode) 5 and a p-type semiconductor layer 4 formed on a surface of a second substrate 10'. By bonding the n-type semiconductor layer 3 and the p-type semiconductor layer 4 via the spacers 6, a gap sp is formed between both semiconductor layers 3, 4. <P>COPYRIGHT: (C)2013,JPO&INPIT |
