发明名称 HIGH FREQUENCY AMPLIFIER CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a high frequency amplifier circuit capable of suppressing a gain change due to temperature fluctuations while ensuring a low noise characteristic and a high saturation characteristic without mounting a step type variable attenuator. <P>SOLUTION: The high frequency amplifier circuit includes: a variable attenuator that attenuates a high frequency signal; a band gap reference current source circuit that outputs a temperature proportional current and a temperature fixed current on the basis of a semiconductor band gap; and a variable attenuator control voltage formation circuit that outputs a voltage changing at a predetermined inclination to temperatures with the temperature proportional current and the temperature fixed current as an input. Thus, an attenuation amount of the variable attenuator is controlled by an output voltage of the variable attenuator control voltage formation circuit. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013115641(A) 申请公布日期 2013.06.10
申请号 JP20110260536 申请日期 2011.11.29
申请人 MITSUBISHI ELECTRIC CORP 发明人 KAGANO MIKI;YUNOGAMI NORIHIRO;KIRIKOSHI YU
分类号 H03F1/30;H03F3/189 主分类号 H03F1/30
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