| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device having a structure including a plurality of laminated memory chips. <P>SOLUTION: Either one of the memory chips includes: a bit line sense amplifier that are connected with the plurality of bit lines arranged for each of the plurality of memory chips and enable bit lines of memory chips that are to be activated; and a sub-word line drivers that are connected with the plurality of word lines arranged for each of the plurality of memory chips and enable word lines of memory chips that are to be activated. The bit line sense amplifiers and sub-word line drivers are provided in either one of the memory chips. <P>COPYRIGHT: (C)2013,JPO&INPIT |
