SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

摘要

PURPOSE: A semiconductor device and a method for manufacturing the semiconductor device are provided to prevent the parasitic capacitance between floating gates by forming a deep air gap extended to the floating gates of gate patterns. CONSTITUTION: A tunnel insulating layer is formed on a substrate(100). Gate patterns(160) are formed on the tunnel insulating layer. A capping layer pattern(170a) is formed on the sidewall of the gate pattern and a tunnel insulating layer. A tunnel insulating pattern(110a) is formed in the active area of the substrate. An insulating layer(180) covering the gate pattern and the capping layer pattern is formed on the tunnel insulating pattern. An air gap(185) is formed in the insulating layer between the adjacent capping layer patterns. [Reference numerals] (AA) Second direction; (BB) First direction