| 摘要 |
A light emitting diode having an AlInGaP active layer and a method for fabricating the same are provided to prevent optical absorption and to improve light emitting efficiency by using a base substrate having an optical characteristic. A plurality of metal patterns(65) are formed apart from each other on a base substrate(71). An insulating layer is inserted between the base substrate and the metal patterns. A plurality of light emitting cells are positioned on the metal patterns. Each of the light emitting cells includes a first conductive type lower semiconductor layer, an AlGaInP active layer, and a second conductive type upper semiconductor layer. A plurality of wirings(79) are connected in series to each other. Each of the metal patterns includes an adhesive metal layer and a reflective metal layer. |
