发明名称 NITRIDE BASED LIGHT EMITTING DIODE WITH EXCELLENT EFFECT OF BLOCKING LEAKAGE CURRENT AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A nitride based light emitting diode with excellent leakage current blocking effect and a manufacturing method thereof are provided to improve the light efficiency by forming a current blocking part. CONSTITUTION: A current blocking part(220) is made of an insulating material. The current blocking part is arranged between a substrate and an n-type nitride layer(230). An active layer(240) is formed on the n-type nitride layer. A p-type nitride layer is formed on the active layer. The substrate has an upper surface.
申请公布号 KR20130061155(A) 申请公布日期 2013.06.10
申请号 KR20130041279 申请日期 2013.04.15
申请人 ILJIN-LED CO., LTD. 发明人 CHOI, WON JIN;PARK, JUNG WON
分类号 H01L33/14;H01L33/12;H01L33/22;H01L33/32 主分类号 H01L33/14
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