发明名称 |
NITRIDE BASED LIGHT EMITTING DIODE WITH EXCELLENT EFFECT OF BLOCKING LEAKAGE CURRENT AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A nitride based light emitting diode with excellent leakage current blocking effect and a manufacturing method thereof are provided to improve the light efficiency by forming a current blocking part. CONSTITUTION: A current blocking part(220) is made of an insulating material. The current blocking part is arranged between a substrate and an n-type nitride layer(230). An active layer(240) is formed on the n-type nitride layer. A p-type nitride layer is formed on the active layer. The substrate has an upper surface.
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申请公布号 |
KR20130061155(A) |
申请公布日期 |
2013.06.10 |
申请号 |
KR20130041279 |
申请日期 |
2013.04.15 |
申请人 |
ILJIN-LED CO., LTD. |
发明人 |
CHOI, WON JIN;PARK, JUNG WON |
分类号 |
H01L33/14;H01L33/12;H01L33/22;H01L33/32 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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