PURPOSE: A pattern forming method is provided to remove residual films when a pattern is formed on the surface of a substrate. CONSTITUTION: A pattern forming method includes the following steps of: laminating a dry film resist(DFR) on the surface of a substrate(ST10); arranging a mask with a pattern on the DFR and exposing(ST20); developing an exposure pattern formed on the DFR(ST30); and etching the surface of the substrate(ST40). The step of developing the exposure pattern includes first and second development steps. Development liquids with different concentrations are used for the first and second development steps. [Reference numerals] (ST10) Laminating step; (ST20) Exposing step; (ST30) Developing step; (ST40) Etching step
