| 摘要 |
A light emitting diode having a nano wire electrode pad and a method for manufacturing the same are provided to increase the quantity of light emitted to the outside by reducing light generated from the light emitting diode to be absorbed to the nano wire electrode pad or to be reflected to the inside. A first conductive semiconductor layer(220), an active layer(240), a second conductive semiconductor layer(260), and a transparent electrode layer(320) are epi-grown in turn on a substrate(100). A mesa etching process is performed to expose a part of the first conductive semiconductor layer. A photoresist layer(10) is formed on the transparent electrode layer and the exposed first conductive semiconductor layer to open a position where electrode pads are formed. An aluminum layer(20) is formed on the photoresist layer. An anodic oxidization process is performed to form on the aluminum layer an anodic aluminum oxide layer at which plural holes(21) are formed. A metal for an electrode pad is deposited on the aluminum layer at which the anodic aluminum oxide layer is formed. The metal is filled in each hole of the anodic aluminum oxide layer. The photoresist layer and the aluminum layer are removed to expose a nano wire electrode formed on the transparent electrode layer and the exposed first conductive semiconductor layer. |
