| 摘要 |
<P>PROBLEM TO BE SOLVED: To avoid throughput deterioration in formation of a through electrode and cost increase. <P>SOLUTION: A semiconductor device manufacturing method comprises: forming a hole 26 for a through electrode in a silicon substrate 1; forming a groove 35 by etching insulation films 22, 23 including the hole 26; subsequently, laminating a barrier metal layer 41 and a seed layer 42 and polishing the seed layer 42 by a CMP method to leave the seed layer 42 on an inner wall of the hole 26 and in the groove 35; immersing the silicon substrate 1 in a plating tank and supplying a current in the hole 26 via the groove 35 thereby to grow a Cu film 47 only in the hole 26 and in the groove 35. <P>COPYRIGHT: (C)2013,JPO&INPIT |
