| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device with light weight, high heat-radiation efficiency, and high rigidity. <P>SOLUTION: A power semiconductor device includes a base 1, semiconductor circuits 2 disposed on the base 1, and a cooling fin 3 for cooling the semiconductor circuits 2. One or more salients 1a and 1b are formed on the base 1, and the width of the salients 1a and 1b in the direction parallel to a surface of the base 1 is wider than the thickness of the base 1, thereby providing a power semiconductor devices 100, 200, 300, and 400 with light weight, high heat-radiation efficiency, and high rigidity. <P>COPYRIGHT: (C)2013,JPO&INPIT |
