| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a processed wafer support structure capable of improving in-plane uniformity of plasma processing in a processed wafer in simple configuration. <P>SOLUTION: A processed wafer support structure 31 comprises a susceptor 33 which is a disk-shaped member and on which a processed wafer W is supported as being placed, a shaft 32 which is a cylindrical member and of which one end is mounted to a lower side of the susceptor 33, and a heater 36 which is provided within the susceptor 33. The susceptor 33 is comprised of a member of first heat conductivity. The shaft 32 is comprised of a member of second heat conductivity that is equal to or higher than the first heat conductivity. In a portion which is located inside of the susceptor 33 and positioned at an upper side of a coupling part 40, where the one end of the shaft 32 is mounted to the susceptor 33, while being spaced apart from the coupling part 40, a heat insulating part 41 of third heat conductivity being lower than the first heat conductivity is provided. <P>COPYRIGHT: (C)2013,JPO&INPIT |
