| 摘要 |
<p>PURPOSE: A non-volatile memory device and a method for fabricating the same are provided to improve a driving operation by using a memory cell formed by combination of a first stack with a second stack manufactured by a separate formation process. CONSTITUTION: A first part stack(ST1) having a first circuit element is formed on the substrate(10). The first circuit element includes a diode layer(Da), a variable resistive layer, and a wiring layer(WL). A second part stack(ST2) having a second circuit element is formed on the handle substrate(10H). The second part stack of a handle substrate is combined with the first part stack of the substrate. The handle substrate is removed from the second part stack.</p> |
