METHOD FOR MANUFACTURING SPUTTERING TARGET AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a sputtering target and a method for manufacturing a semiconductor device are provided to improve the crystallization of a film and to obtain the film with a desired composition. CONSTITUTION: Raw materials are refined(S101). Oxide powder is measured and mixed(S102). The oxide powder is heated to form a crystal(S103). The crystal is pulverized into powder(S104). The powder is mixed with zinc oxide(S105). The zinc oxide and the powder are sintered to form a sintered body(S106). The sinter is mechanically processed to form a target(S107). The target is heat-treated(S108). The target is bonded to a backing plate(S109). [Reference numerals] (S101) Refine raw materials; (S102) Measure and mix oxide powder; (S103) Form a crystal; (S104) Pulverize the crystal; (S105) Measure and mix the powder with zinc oxide; (S106) Sinter under a high purity oxygen atmosphere; (S107) Process; (S108) Heat-treat; (S109) Bond