| 摘要 |
A film deposition system which a cycle of alternately supplying a first reactive gas and a second reactive gas and exhausting them is repeated twice or more in a vacuum vessel to cause reaction between the two gases, thereby depositing thin films on substrate surfaces, the film deposition system includes: a plurality of lower members having substrate-placing areas on which substrates will be placed; a plurality of upper members so placed that they face the lower members to form processing spaces together with the substrate-placing areas; a first reactive gas supply unit and a second reactive gas supply unit for supplying a first reactive gas and a second reactive gas, respectively, to the processing spaces; a purge gas supply unit for supplying a purge gas in the period between a first reactive gas supply period and a second reactive gas supply period; exhaust openings, situated along circumferences of the processing spaces, for communicating the inside of the processing spaces with the atmosphere in the vacuum vessel that is outside of the processing spaces; and an evacuating unit for evacuating the processing spaces via the atmosphere in the exhaust openings and the vacuum vessel. |
