发明名称 |
POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS WITH BRIDGED-GRAIN STRUCTURES |
摘要 |
A low temperature polycrystalline silicon device and techniques to manufacture thereof with excellent performance. Employing doped poly-Si lines which we called a bridged-grain structure (BG), the intrinsic or lightly doped channel is separated into multiple regions. A single gate covering the entire active channel including the doped lines is still used to control the current flow. Using this BG poly-Si as an active layer and making sure the TFT is designed so that the current flows perpendicularly to the parallel lines of grains, grain boundary effects can be reduced. |
申请公布号 |
HK1141625(A1) |
申请公布日期 |
2013.06.07 |
申请号 |
HK20100107805 |
申请日期 |
2010.08.16 |
申请人 |
THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY |
发明人 |
KWOK, HOISING;WONG, MAN;MENG, ZHIGUO;ZHAO, SHUYUN |
分类号 |
H01L |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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