MANUFACTURING METHOD FOR THIN FILM OF POLY-CRYSTALLINE MATERIAL

摘要

PURPOSE: A method for manufacturing a low temperature polycrystalline thin film is provided to improve the quantity of crystallized silicon. CONSTITUTION: An insulating layer is formed on a substrate(S1). A first metal layer is formed on the insulating layer(S2). The first metal layer is heat-treated to form a first metal oxide layer(S3). A first amorphous layer is formed on the first metal oxide layer(S4). A first seed layer is formed by using the compound of the first amorphous layer and the first metal layer(S5). A second metal layer is formed on the first seed layer(S6). The second metal layer is heat-treated to form a second metal oxide layer(S7). A second amorphous layer is formed on the second metal oxide layer(S8). A second seed layer is formed by using the compound of the second amorphous layer and the second metal layer(S9). A third amorphous layer is formed on the second seed layer(S10). The third amorphous layer is heat-treated to form a crystalline thin film(S11). [Reference numerals] (S1) Step of forming an insulating layer; (S10) Step of forming a third amorphous layer; (S11) Step of crystallization; (S2) Step of forming a first metal layer; (S3) Step of forming a first metal oxide layer; (S4) Step of forming a first amorphous layer; (S5) Step of forming a first seed layer; (S6) Step of forming a second metal layer; (S7) Step of forming a second metal oxide layer; (S8) Step of forming a second amorphous layer; (S9) Step of forming a second seed layer