FILM FORMATION METHOD OF SILICON OXIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a film formation method of silicon oxide film capable of obtaining a silicon oxide film having excellent surface roughness.

SOLUTION: The film formation method of a silicon oxide film comprises the steps of: forming a seed layer 2 on a base substrate 1; forming a silicon film 3 on the seed layer 2; and forming a silicon oxide film 4 on the base substrate 1 by oxidizing the silicon film 3 and the seed layer 2.

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