SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME

摘要

A semiconductor memory device includes a memory array including a plurality of memory cells, and a peripheral circuit configured to perform an erase operation by supplying a first erase voltage to selected memory cells and perform an erase verify operation by supplying an erase verify voltage to the selected memory cells, wherein the peripheral circuit is configured to increase the first erase voltage to a first level at a first rising rate for a first rising period and increase the first erase voltage to a first target level at a second rising rate lower than the first rising rate for a second rising period.