发明名称 |
RAPID THERMAL ANNEALING TO REDUCE PATTERN EFFECT |
摘要 |
A method of performing rapid thermal annealing on a substrate including heating the substrate to a first temperature in a rapid thermal annealing system having a front-side heating source and a backside heating source. The method further includes raising the temperature of the substrate from the first temperature to a second temperature greater than the first temperature. The backside heating source provides a greater amount of heat than the front-side heating source during the raising of the temperature of the substrate.
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申请公布号 |
US2013143418(A1) |
申请公布日期 |
2013.06.06 |
申请号 |
US201313753928 |
申请日期 |
2013.01.30 |
申请人 |
TSAI CHUN HSIUNG;WU CHII-MING;LIN DA-WEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAI CHUN HSIUNG;WU CHII-MING;LIN DA-WEN |
分类号 |
H01L21/324 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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