发明名称 RAPID THERMAL ANNEALING TO REDUCE PATTERN EFFECT
摘要 A method of performing rapid thermal annealing on a substrate including heating the substrate to a first temperature in a rapid thermal annealing system having a front-side heating source and a backside heating source. The method further includes raising the temperature of the substrate from the first temperature to a second temperature greater than the first temperature. The backside heating source provides a greater amount of heat than the front-side heating source during the raising of the temperature of the substrate.
申请公布号 US2013143418(A1) 申请公布日期 2013.06.06
申请号 US201313753928 申请日期 2013.01.30
申请人 TSAI CHUN HSIUNG;WU CHII-MING;LIN DA-WEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 TSAI CHUN HSIUNG;WU CHII-MING;LIN DA-WEN
分类号 H01L21/324 主分类号 H01L21/324
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