CIRCUIT FOR DRIVING POWER SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To implement surge capacity improvement and overvoltage protection of a power semiconductor element without deteriorating high speed switching performance.

SOLUTION: A gate control terminal 5 is provided in a position spaced by a predetermined distance from a drain terminal 1b, and a discharge is allowed to take place between the drain terminal 1b and the gate control terminal 5 in the event of a surge. The discharge phenomenon applies a surge voltage to the gate control terminal 5 to charge a gate of a power semiconductor element 1 until turning on the power semiconductor element 1 to absorb surge energy. This can reduce a surge voltage applied to the drain terminal 1b to prevent the power semiconductor element 1 from breaking down.

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