发明名称 |
SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF |
摘要 |
A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, including: a substrate; two field oxide regions formed in the substrate; two pseudo buried layers, each being formed under a corresponding one of the field oxide regions; a collector region formed between the field oxide regions, the collector region laterally extending under a corresponding one of the field oxide regions and each side of the collector region being connected with a corresponding one of the pseudo buried layers; a matching layer formed under both the pseudo buried layers and the collector region; and two deep hole electrodes, each being formed in a corresponding one of the field oxide regions, the deep hole electrodes being connected to the corresponding ones of the pseudo buried layers for picking up the collector region. A manufacturing method of the SiGe HBT is also disclosed.
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申请公布号 |
US2013140604(A1) |
申请公布日期 |
2013.06.06 |
申请号 |
US201213682123 |
申请日期 |
2012.11.20 |
申请人 |
SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.;SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD. |
发明人 |
HU JUN;SHI JING;QIAN WENSHENG;LIU DONGHUA;DUAN WENTING;CHEN FAN;CHIU TZUYIN |
分类号 |
H01L29/66;H01L29/737 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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