Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.
申请公布号
WO2013081327(A1)
申请公布日期
2013.06.06
申请号
WO2012KR09847
申请日期
2012.11.21
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
SHIN, JEA SHIK;KIM, DUCK HWAN;KIM, CHUL SOO;SON, SANG UK;SONG, IN SANG;LEE, MOON CHUL