发明名称 VOLATILE MEMORY ACCESS VIA SHARED BITLINES
摘要 A memory includes an array of memory cells that form rows and columns. The rows of the array include memory cell pairs. The memory cells may include two cross-coupled inverters and two pass-devices that couple to alternate sides of the cross-coupled inverters. The two memory cells of a memory cell pair share a common intra-pair bitline. Adjacent memory cell pairs share a common inter-pair bitline. To perform a data read operation on a particular memory cell in a memory cell pair in the rows and columns of the array, wordline drive circuitry transmits wordline activate signals to select both the row for the data read operation and a particular one of the pair of memory cells for the data read operation.
申请公布号 US2013141992(A1) 申请公布日期 2013.06.06
申请号 US201113312867 申请日期 2011.12.06
申请人 LEE MICHAEL JU HYEOK;TRUONG BAO G.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 LEE MICHAEL JU HYEOK;TRUONG BAO G.
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
主权项
地址