| 摘要 |
A photoelectric conversion device (11) according to the present invention comprises a substrate (1), an electrode layer (2) disposed on the substrate (1), and a semiconductor layer (3) disposed on the electrode layer (2). The semiconductor layer (3) comprises a first region (3a) in a direction along the electrode layer (2), and a second region (3b) which has a higher density than the first region (3a). Photoelectric conversion efficiency is increased by the second region (3b) which has the higher density, and stress is relieved using the first region (3a) which has a lower density, that is, a higher porosity so as to reduce the occurrence of peeling and cracking at the semiconductor layer (3) and increase the photoelectric conversion efficiency. |
